![Tris(N-Methylethanaminato)[(2-Methyl-2-Propanyl)Imino]Niobium,CAS 864150-47-0](http://ilrorwxhlpppln5m.ldycdn.com/cloud/lqBpiKpnliSRlllknklmkq/864150-800-800.png "CAS 864150-47-0,TBTEMN") |
![Tris(N-Methylethanaminato)[(2-Methyl-2-Propanyl)Imino]Niobium,CAS 864150-47-0](http://ilrorwxhlpppln5m.ldycdn.com/cloud/lqBpiKpnliSRlllknklmkq/864150.png "CAS 864150-47-0,TBTEMN")
![Tris(N-Methylethanaminato)[(2-Methyl-2-Propanyl)Imino]Niobium,CAS 864150-47-0](http://ilrorwxhlpppln5m.ldycdn.com/cloud/lqBpiKpnliSRlllknklmkq/864150-100-100.png "CAS 864150-47-0,TBTEMN")
Molecular Formula: C13H33N4Nb
Molecular Weight: 338.34
Package Information: 100g,500g, 1kg or customized
TBTEMN exhibits excellent thermal stability and controllable volatility over a wide temperature range, making it an ideal niobium source precursor for high-precision thin film deposition.
The TBTEMN we provide is rigorously purified to ensure high purity. Thin films deposited from it typically exhibit extremely low levels of oxygen and carbon impurities, which are crucial for achieving superconducting properties and functioning as an efficient diffusion barrier.
Tris(N-methylethanaminato)[(2-methyl-2-propanyl)imino]niobium undergoes an efficient decomposition reaction at low temperatures, forming uniform, dense Nb2O5 thin films with both high deposition rate and high film quality.
Compatible with ALD, CVD, and hybrid process systems, it is suitable for the deposition of metal oxide stacks, multilayer structures, and transparent conductive films.
TBTEMN is an ideal precursor for forming high-dielectric-constant niobium oxide (Nb2O5) thin films, which are used in capacitor dielectric layers, gate oxide layers, and DRAM chip manufacturing.
The resulting Nb2O5 thin films exhibit excellent refractive index and light transmittance, and are widely used in optical applications such as optical waveguides, optical filters, and anti-reflective coatings.
In scientific research, NbN thin films deposited using TBTEMN are being explored for use in emerging electronic devices such as memristors and negative capacitance field-effect transistors (NC-FETs). Their unique electrical properties are being leveraged to develop next-generation information storage and processing technologies.
Store in a sealed, inert atmosphere (argon or nitrogen is recommended) to avoid contact with air and moisture. Keep the storage area away from light, in a cool, dry place.
When using, it must be carried out in an inert atmosphere glove box or dry box to avoid decomposition caused by exposure to air.
Wear chemical-resistant gloves, protective goggles and protective clothing during operation to avoid contact with skin and eyes.
Small leaks can be covered with dry inert adsorbents (such as silicon carbide powder); waste liquid must be recycled and treated in accordance with hazardous chemical standards and must not be discharged directly into the sewer system.
1. How can I extend the shelf life of TBTEMN?
Keeping it sealed, storing it in an inert atmosphere, and avoiding frequent opening can effectively extend its shelf life. It is recommended to use it within three months of opening to prevent loss of purity.
2. How can I determine if it's deteriorating?
Key signs of deterioration include a significant darkening of the liquid color (to dark brown or black), the presence of insoluble particles or precipitates, and a significant decrease in vapor pressure (manifested by difficulty bubbling with a bubbler). If any of these conditions occur, the precursor has decomposed or polymerized, and is not recommended for use in rigorous thin film deposition processes.
For more information or to purchase Tris(N-methylethanaminato)[(2-methyl-2-propanyl)imino]niobium(TBTEMN), please feel free to contact us via email or WhatsApp.
Molecular Formula: C13H33N4Nb
Molecular Weight: 338.34
Package Information: 100g,500g, 1kg or customized
TBTEMN exhibits excellent thermal stability and controllable volatility over a wide temperature range, making it an ideal niobium source precursor for high-precision thin film deposition.
The TBTEMN we provide is rigorously purified to ensure high purity. Thin films deposited from it typically exhibit extremely low levels of oxygen and carbon impurities, which are crucial for achieving superconducting properties and functioning as an efficient diffusion barrier.
Tris(N-methylethanaminato)[(2-methyl-2-propanyl)imino]niobium undergoes an efficient decomposition reaction at low temperatures, forming uniform, dense Nb2O5 thin films with both high deposition rate and high film quality.
Compatible with ALD, CVD, and hybrid process systems, it is suitable for the deposition of metal oxide stacks, multilayer structures, and transparent conductive films.
TBTEMN is an ideal precursor for forming high-dielectric-constant niobium oxide (Nb2O5) thin films, which are used in capacitor dielectric layers, gate oxide layers, and DRAM chip manufacturing.
The resulting Nb2O5 thin films exhibit excellent refractive index and light transmittance, and are widely used in optical applications such as optical waveguides, optical filters, and anti-reflective coatings.
In scientific research, NbN thin films deposited using TBTEMN are being explored for use in emerging electronic devices such as memristors and negative capacitance field-effect transistors (NC-FETs). Their unique electrical properties are being leveraged to develop next-generation information storage and processing technologies.
Store in a sealed, inert atmosphere (argon or nitrogen is recommended) to avoid contact with air and moisture. Keep the storage area away from light, in a cool, dry place.
When using, it must be carried out in an inert atmosphere glove box or dry box to avoid decomposition caused by exposure to air.
Wear chemical-resistant gloves, protective goggles and protective clothing during operation to avoid contact with skin and eyes.
Small leaks can be covered with dry inert adsorbents (such as silicon carbide powder); waste liquid must be recycled and treated in accordance with hazardous chemical standards and must not be discharged directly into the sewer system.
1. How can I extend the shelf life of TBTEMN?
Keeping it sealed, storing it in an inert atmosphere, and avoiding frequent opening can effectively extend its shelf life. It is recommended to use it within three months of opening to prevent loss of purity.
2. How can I determine if it's deteriorating?
Key signs of deterioration include a significant darkening of the liquid color (to dark brown or black), the presence of insoluble particles or precipitates, and a significant decrease in vapor pressure (manifested by difficulty bubbling with a bubbler). If any of these conditions occur, the precursor has decomposed or polymerized, and is not recommended for use in rigorous thin film deposition processes.
For more information or to purchase Tris(N-methylethanaminato)[(2-methyl-2-propanyl)imino]niobium(TBTEMN), please feel free to contact us via email or WhatsApp.
