 |
Molecular Formula: C16H39N4Nb
Appearance: Brown liquid
Molecular Weight: 380.42
Flash Point: -3℃
Density: 1.015 g/mL at 25 °C
Sensibility: Air and moisture sensitive
As a liquid precursor, (t-butylimido)tris(diethylamino)niobium(V) offers stable and sufficient vapor pressure at moderate temperatures, making it ideal for precise ALD or CVD delivery via bubbling.
TBTDEN exhibits excellent thermal stability at delivery temperatures, preventing premature decomposition in the source bottle or in the delivery pipeline, ensuring process reliability and reproducibility.
This compound possesses extremely high chemical purity, leaving virtually no organic residue during the deposition process. This ensures thin films exhibit low resistivity, high density, and excellent crystallinity, meeting the stringent film quality requirements for high-end microelectronics and superconducting applications.
TBTDEN exhibits exceptional low-temperature reactivity, enabling the low-temperature deposition of NbN films with ideal stoichiometry and excellent electrical properties.
(t-butylimido)tris(diethylamino)niobium(V) is a commonly used raw material for depositing niobium oxide (Nb₂O₅) and niobium nitride (NbN) thin films in ALD and CVD processes. These thin films are used in logic chip manufacturing, capacitor dielectric layers, and barrier layers.
TBTDEN easily decomposes into a highly dense niobium layer in an inert atmosphere. It is suitable for depositing protective films on metal and ceramic substrates, enhancing corrosion and wear resistance and significantly extending their service life.
As a niobium source precursor, this compound is often used in the preparation of transparent conductive films and electrochromic films, significantly improving the transmittance and conductivity of these devices.
By adjusting the ratio of TBTDEN to an oxygen-containing source (such as water, O₂) and a nitrogen-containing source, niobium oxynitride thin films can be deposited. These materials exhibit excellent performance and great application potential in electrocatalysis and sensing.
All operations, including sampling, transfer, and filling of source bottles, must be performed in a glove box filled with high-purity inert gas (such as argon) or a closed Schlenk line system.
Since TBTDEN is highly sensitive to air and moisture, it should be stored in a sealed container under the protection of argon or nitrogen to prevent hydrolysis and decomposition.
This compound is flammable and should be stored in a cool, dark place away from direct sunlight and heat and fire sources.
It is strictly forbidden to contact or store it with any oxidants, water, strong acids, alcohols or other substances containing active hydrogen or highly reactive substances to prevent violent chemical reactions and cause danger.
If a leak occurs, cover it with an inert absorbent (such as diatomaceous earth or dry sand) and do not use water to clean it up.
1. What is the difference between TBTDEN and TDMANb?
Both are niobium source precursors, but TBTDEN offers greater thermal stability and lower deposition residue, making it more suitable for ALD processes requiring higher cleanliness and film thickness uniformity.
2. What special storage considerations are required for (t-butylimido)tris(diethylamino)niobium(V)?
In addition to standard precautions to protect against air and moisture, TBTDEN requires special attention to thermal stability. It is recommended to store between 0°C and room temperature, avoiding prolonged exposure to elevated temperatures to prevent slow thermal decomposition.
For more information or to purchase (T-Butylimido)Tris(Diethylamino)Niobium(V)(TBTDEN), please feel free to contact us via email or WhatsApp.
Molecular Formula: C16H39N4Nb
Appearance: Brown liquid
Molecular Weight: 380.42
Flash Point: -3℃
Density: 1.015 g/mL at 25 °C
Sensibility: Air and moisture sensitive
As a liquid precursor, (t-butylimido)tris(diethylamino)niobium(V) offers stable and sufficient vapor pressure at moderate temperatures, making it ideal for precise ALD or CVD delivery via bubbling.
TBTDEN exhibits excellent thermal stability at delivery temperatures, preventing premature decomposition in the source bottle or in the delivery pipeline, ensuring process reliability and reproducibility.
This compound possesses extremely high chemical purity, leaving virtually no organic residue during the deposition process. This ensures thin films exhibit low resistivity, high density, and excellent crystallinity, meeting the stringent film quality requirements for high-end microelectronics and superconducting applications.
TBTDEN exhibits exceptional low-temperature reactivity, enabling the low-temperature deposition of NbN films with ideal stoichiometry and excellent electrical properties.
(t-butylimido)tris(diethylamino)niobium(V) is a commonly used raw material for depositing niobium oxide (Nb₂O₅) and niobium nitride (NbN) thin films in ALD and CVD processes. These thin films are used in logic chip manufacturing, capacitor dielectric layers, and barrier layers.
TBTDEN easily decomposes into a highly dense niobium layer in an inert atmosphere. It is suitable for depositing protective films on metal and ceramic substrates, enhancing corrosion and wear resistance and significantly extending their service life.
As a niobium source precursor, this compound is often used in the preparation of transparent conductive films and electrochromic films, significantly improving the transmittance and conductivity of these devices.
By adjusting the ratio of TBTDEN to an oxygen-containing source (such as water, O₂) and a nitrogen-containing source, niobium oxynitride thin films can be deposited. These materials exhibit excellent performance and great application potential in electrocatalysis and sensing.
All operations, including sampling, transfer, and filling of source bottles, must be performed in a glove box filled with high-purity inert gas (such as argon) or a closed Schlenk line system.
Since TBTDEN is highly sensitive to air and moisture, it should be stored in a sealed container under the protection of argon or nitrogen to prevent hydrolysis and decomposition.
This compound is flammable and should be stored in a cool, dark place away from direct sunlight and heat and fire sources.
It is strictly forbidden to contact or store it with any oxidants, water, strong acids, alcohols or other substances containing active hydrogen or highly reactive substances to prevent violent chemical reactions and cause danger.
If a leak occurs, cover it with an inert absorbent (such as diatomaceous earth or dry sand) and do not use water to clean it up.
1. What is the difference between TBTDEN and TDMANb?
Both are niobium source precursors, but TBTDEN offers greater thermal stability and lower deposition residue, making it more suitable for ALD processes requiring higher cleanliness and film thickness uniformity.
2. What special storage considerations are required for (t-butylimido)tris(diethylamino)niobium(V)?
In addition to standard precautions to protect against air and moisture, TBTDEN requires special attention to thermal stability. It is recommended to store between 0°C and room temperature, avoiding prolonged exposure to elevated temperatures to prevent slow thermal decomposition.
For more information or to purchase (T-Butylimido)Tris(Diethylamino)Niobium(V)(TBTDEN), please feel free to contact us via email or WhatsApp.
