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Name: Tetrakis(diethylamino) Zirconium (IV); TDEAZ
MF: Zr[N(CH2CH3)]4
CAS: 13801-49-5
Appearance: light yellow liquid
Tetrakis(dimethylamino)zirconium, also known as TDEAZ, is a high-purity organometallic zirconium precursor widely used in Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) processes. With excellent thermal stability, high volatility, and low impurity levels, TDEAZ enables the deposition of uniform, conformal ZrO₂ and zirconium-containing thin films on complex 3D structures, making it ideal for semiconductor manufacturing, high-k dielectric layers, passivation coatings, and optical applications.
Produced in a controlled cleanroom environment, our TDEAZ meets 6N purity standards and is packaged in high-integrity stainless-steel bubblers or cylinders to ensure stable vapor delivery and contamination-free integration into ALD/CVD systems.
High-k dielectric zirconium oxide films for DRAM, logic devices, and advanced process nodes.
Diffusion barrier and interface layers in semiconductor manufacturing.
Optical and protective coatings in precision optics.
R&D in thin-film materials science and nanotechnology.
If you have any inquiries, feel free to reach out to us via the email or WhatsApp.
Name: Tetrakis(diethylamino) Zirconium (IV); TDEAZ
MF: Zr[N(CH2CH3)]4
CAS: 13801-49-5
Appearance: light yellow liquid
Tetrakis(dimethylamino)zirconium, also known as TDEAZ, is a high-purity organometallic zirconium precursor widely used in Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) processes. With excellent thermal stability, high volatility, and low impurity levels, TDEAZ enables the deposition of uniform, conformal ZrO₂ and zirconium-containing thin films on complex 3D structures, making it ideal for semiconductor manufacturing, high-k dielectric layers, passivation coatings, and optical applications.
Produced in a controlled cleanroom environment, our TDEAZ meets 6N purity standards and is packaged in high-integrity stainless-steel bubblers or cylinders to ensure stable vapor delivery and contamination-free integration into ALD/CVD systems.
High-k dielectric zirconium oxide films for DRAM, logic devices, and advanced process nodes.
Diffusion barrier and interface layers in semiconductor manufacturing.
Optical and protective coatings in precision optics.
R&D in thin-film materials science and nanotechnology.
If you have any inquiries, feel free to reach out to us via the email or WhatsApp.
![Tris(N-Methylethanaminato)[(2-Methyl-2-Propanyl)Imino]Niobium](http://ilrorwxhlpppln5m.ldycdn.com/cloud/lrBpiKpnliSRilqnppkkkp/864150-640-640.png)
