loading

Share to:
linkedin sharing button
facebook sharing button
whatsapp sharing button
line sharing button
kakao sharing button
wechat sharing button
sharethis sharing button

Tetrakis(Diethylamino) Zirconium丨CAS 13801-49-5

CAS: 13801-49-5
Chemical Formula/Abbreviation: TDEAZ

Tetrakis(dimethylamino)zirconium, also known as TDEAZ, is a high-purity organometallic zirconium precursor widely used in ALD and CVD processes. With excellent thermal stability, high volatility, and low impurity levels, TDEAZ enables the deposition of uniform, conformal ZrO₂ and zirconium-containing thin films on complex 3D structures, making it ideal for semiconductor manufacturing, high-k dielectric layers, passivation coatings, and optical applications
Availability:

Tetrakis(Diethylamino) Zirconium Basic Properties

SynonymsTetrakis(diethylaMino)zirconiuM(IV), 99%; Tetrakis(diethylamino)zirconium,99%;Tetrakis(diethylamino)zirkonium;TETRAKIS(DIETHYLAMINO)ZIRCONIUM
Molecular FormulaC16H40N4Zr
AppearanceYellow liquid
Molecular Weight379.74
Boiling Point128 °C0.05 mm Hg(lit.)
Density1.026 g/mL at 25 °C(lit.)
Refractive Indexn20/D 1.51(lit.)
Flash Point54 °F
Storage ConditionsWater-free area
Purity6N
Package Information100g, 500g, 1kg, or customized

Tetrakis(Diethylamino) Zirconium Key Features

Excellent ALD reactivity

Tetrakis (Diethylamino) Zirconium exhibits high surface reactivity, making it suitable for low-temperature ALD processes and contributing to the acquisition of dense, uniform zirconia films.

Good volatility

As a liquid precursor, TDEAZ exhibits stable vapor transport properties under controlled heating conditions, making it suitable for precise metering and process scale-up.

Controllable purity

When used within a suitable process window, it can effectively reduce the risk of carbon residue and meet the purity requirements of semiconductor devices for thin films.

Mature industrial application foundation

TDEAZ has been validated in various zirconium oxide (ZrO₂) and related composite thin film processes, and is suitable for R&D, pilot production and mass production stages.

Tetrakis(Diethylamino) Zirconium Main Applications

ALD for zirconia thin film preparation

Tetrakis (Diethylamino) Zirconium is a commonly used zirconium source for preparing ZrO₂ thin films, and is widely used in the deposition of high dielectric constant materials in logic devices, memory, and advanced processes.

CVD process

Under specific CVD process conditions, TDEAZ can be used to deposit zirconium-based thin films for the construction of functional or interface layers.

Semiconductors and advanced materials research

In universities and research institutions, this precursor is often used in research on novel thin film materials, interface engineering, and process parameter optimization.

Advanced coatings and functional thin films

Beyond the semiconductor field, TDEAZ is also being used to explore the preparation pathways for high-performance ceramic coatings and functional oxide thin films.

Precautions

  1. Tetrakis (Diethylamino) Zirconium is highly sensitive to moisture and air, and therefore must be handled and stored in an inert atmosphere (such as nitrogen or argon) to prevent any form of moisture from entering.

  2. This compound must not come into contact with water, alcohols, strong oxidizing agents, or acidic substances to prevent violent reactions or decomposition.

  3. Protective gloves, goggles, and other protective equipment must be worn during operation, and the operation must be carried out in a fume hood or inert atmosphere system.

  4. If the chemical comes into contact with skin or eyes, rinse immediately with plenty of water and seek medical attention promptly. Also, inform a professional about the nature of the chemical.

  5. During transportation, it is necessary to ensure that the seal is intact and to avoid high temperature, vibration and damage to the packaging. It is usually carried out in accordance with the regulations for hazardous chemicals.

FAQ

1. What is Tetrakis (Diethylamino) Zirconium?

TDEAZ is an organozirconium precursor with the chemical formula C16H40N4Zr. It has a boiling point of 128 °C (0.05 mm Hg, lit.) and a flash point of 54 °F. It is primarily used in ALD and CVD processes to prepare zirconium-based thin films. 


2. What materials is TDEAZ primarily used for depositing?

The most common application is the deposition of zirconium oxide (ZrO₂) thin films, and it can also be used to study zirconium-based composite oxide thin films. 


3. Is this compound suitable for low-temperature ALD processes?

Yes, its high reactivity makes it suitable for the relatively low-temperature ALD process window. 


4. What are the storage requirements for this product?

It must be stored in anhydrous and oxygen-free conditions, typically using inert gas protection and a dedicated sealed container. 


5. Is Tetrakis (Diethylamino) Zirconium suitable for industrial mass production?

With a mature process control and safety system in place, TDEAZ has been widely used in pilot-scale and industrial-scale ALD/CVD production. 


Wolfa professionally supplies Tetrakis(Diethylamino) Zirconium, supporting small-batch sampling and large-volume procurement needs. Packaging options include ordinary glass bottles, glass ampoules, metal ampoules, etc.


For product analysis reports (such as COA) or procurement consulting, please feel free to contact us at jomin@wolfabio.com at any time.

Reliable Sourcing | Custom Synthesis | Consistent Quality for R&D and Scale-Up

CONTACT US

 Phone:+86 18050950397
 Email:jomin@wolfabio.com
 WeChat:+86 18050950397
  WhatsApp:+86 18359103607
Address: 3901 Sansheng Tuscany, Nanyu Town, Minhou County, Fuzhou City, Fujian Province

QUICK LINKS

PRODUCTS CATEGORY

SIGN UP FOR OUR NEWSLETTER

Copyright © 2025 WOLFA All Rights Reserved
Leave a Message