 |
Name: (3,3-Dimethyl-1-butyne)dicobalt hexacarbonyl ; CCTBA
MF: C12H10Co2O6
MW: 368.07
CAS: 56792-69-9
Appearance: Dark red liquid
BP: 52 °C
Sensitivity: Air
Semiconductor Interconnects
ALD/CVD precursor for cobalt films in advanced nodes, replacing copper in interconnect metallization.
Low-Resistivity Cobalt Layers
Provides uniform, conformal films with excellent electrical performance for logic and memory chips.
Advanced Packaging
Applied in barrier/liner and seed layer deposition for 3D integration and high-aspect-ratio structures.
Catalysis
Precursor for selective organometallic transformations such as Nicholas and Pauson–Khand reactions.
Materials Research
Used in the synthesis of novel cobalt complexes and nanostructured materials.
Custom packaging for R&D or production scale.
If you have any inquiries, feel free to reach out to us via the email or WhatsApp.
Name: (3,3-Dimethyl-1-butyne)dicobalt hexacarbonyl ; CCTBA
MF: C12H10Co2O6
MW: 368.07
CAS: 56792-69-9
Appearance: Dark red liquid
BP: 52 °C
Sensitivity: Air
Semiconductor Interconnects
ALD/CVD precursor for cobalt films in advanced nodes, replacing copper in interconnect metallization.
Low-Resistivity Cobalt Layers
Provides uniform, conformal films with excellent electrical performance for logic and memory chips.
Advanced Packaging
Applied in barrier/liner and seed layer deposition for 3D integration and high-aspect-ratio structures.
Catalysis
Precursor for selective organometallic transformations such as Nicholas and Pauson–Khand reactions.
Materials Research
Used in the synthesis of novel cobalt complexes and nanostructured materials.
Custom packaging for R&D or production scale.
If you have any inquiries, feel free to reach out to us via the email or WhatsApp.
