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Appearance: Yellow liquid
Molecular Weight: 323.63
Boiling Point: 81 °C0.1 mm Hg(lit.)
Density: 1.049 g/mL at 25 °C(lit.)
Storage Conditions: Safe temperature ≤ 51 ℃, recommended storage temperature 0-25 ℃
Hydrolysis Sensitivity: Reacts rapidly with moisture, water, protic solvents
Purity: ≥99.999%
Tetrakis (ethylmethylamino) zirconium is synthesized using a rigorous anhydrous and oxygen-free process, resulting in extremely low metallic impurities and ensuring high purity and stable dielectric properties in the deposited films.
TEMAZ vaporizes efficiently at relatively low temperatures, and its decomposition products are highly volatile and leave no residue, making it suitable for long-term, stable use in ALD and CVD equipment.
C12H32N4Zr can be used with a variety of oxidizing sources, including H₂O, O₃, and O₂ plasma, making it suitable for the production of various zirconium oxide thin films using diverse equipment and processes.
Tetrakis (ethylmethylamino) zirconium is commonly used in the preparation of high-k dielectric constant (High-k) semiconductor materials, meeting the stringent requirements for film uniformity and thickness control in logic chips, memory, and power devices.
Tetrakis (ethylmethylamino) zirconium is an important precursor for depositing high-dielectric thin films such as ZrO₂, ZrN, and ZrSiO₄ in the ALD process. It is used in device structures such as MOSFETs, DRAMs, and CMOS.
In the CVD process, TEMAZ can produce dense, uniform zirconium oxide thin films for use in the fabrication of electrical insulation layers, gate dielectric layers, and optical protective films.
C12H32N4Zr is used as a zirconium source in the preparation of transparent ceramics, wear-resistant coatings, and high-refractive optical films, improving material stability and performance.
TEMAZ is widely used in the research of novel zirconium-based nanomaterials, such as ZrO₂ nanoparticles, Zr composites, and surface-modified systems.
Tetrakis (ethylmethylamino) zirconium should be stored in a dry, inert gas (nitrogen or argon) environment.
It is recommended to store away from direct sunlight and high temperature environment.
Wear protective gloves, goggles and protective clothing during operation to prevent direct skin contact with liquid or vapor.
In case of leakage, it should be treated immediately with inert absorbent materials (such as diatomaceous earth) and cleaned up under ventilated conditions.
Avoid contact with water, oxidants and acidic substances to prevent violent reactions.
In case of contact with skin or eyes, rinse immediately with plenty of water for at least 15 minutes and seek medical help.
Residues or waste liquids should be collected and sealed and entrusted to professional hazardous waste treatment agencies for disposal.
1. What is the difference between tetrakis (ethylmethylamino) zirconium and tetrakis (dimethylamino) zirconium?
TEMAZ, with its ethyl and methyl substituents, has a higher molecular weight and slightly lower volatility. However, it surpasses TDMAZ in high-temperature stability and film quality, making it more suitable for high-temperature ALD processes.
2. Can TEMAZ be mixed with other metal-organic precursors?
Yes. Tetrakis (ethylmethylamino) zirconium can be used with Hf, Ti, and Al precursors to deposit complex oxide films such as ZrHfO₂ or ZrAlOₓ.
3. How can I determine if TEMAZ is suitable for semiconductor processing?
Typically, it must meet a purity of ≥99.999%, with metal impurities (such as Fe, Na, and K) below 1 ppm, and be accompanied by TDS and GC analysis reports.
For more information or to purchase tetrakis (ethylmethylamino) zirconium, please feel free to contact us via email or WhatsApp.
Appearance: Yellow liquid
Molecular Weight: 323.63
Boiling Point: 81 °C0.1 mm Hg(lit.)
Density: 1.049 g/mL at 25 °C(lit.)
Storage Conditions: Safe temperature ≤ 51 ℃, recommended storage temperature 0-25 ℃
Hydrolysis Sensitivity: Reacts rapidly with moisture, water, protic solvents
Purity: ≥99.999%
Tetrakis (ethylmethylamino) zirconium is synthesized using a rigorous anhydrous and oxygen-free process, resulting in extremely low metallic impurities and ensuring high purity and stable dielectric properties in the deposited films.
TEMAZ vaporizes efficiently at relatively low temperatures, and its decomposition products are highly volatile and leave no residue, making it suitable for long-term, stable use in ALD and CVD equipment.
C12H32N4Zr can be used with a variety of oxidizing sources, including H₂O, O₃, and O₂ plasma, making it suitable for the production of various zirconium oxide thin films using diverse equipment and processes.
Tetrakis (ethylmethylamino) zirconium is commonly used in the preparation of high-k dielectric constant (High-k) semiconductor materials, meeting the stringent requirements for film uniformity and thickness control in logic chips, memory, and power devices.
Tetrakis (ethylmethylamino) zirconium is an important precursor for depositing high-dielectric thin films such as ZrO₂, ZrN, and ZrSiO₄ in the ALD process. It is used in device structures such as MOSFETs, DRAMs, and CMOS.
In the CVD process, TEMAZ can produce dense, uniform zirconium oxide thin films for use in the fabrication of electrical insulation layers, gate dielectric layers, and optical protective films.
C12H32N4Zr is used as a zirconium source in the preparation of transparent ceramics, wear-resistant coatings, and high-refractive optical films, improving material stability and performance.
TEMAZ is widely used in the research of novel zirconium-based nanomaterials, such as ZrO₂ nanoparticles, Zr composites, and surface-modified systems.
Tetrakis (ethylmethylamino) zirconium should be stored in a dry, inert gas (nitrogen or argon) environment.
It is recommended to store away from direct sunlight and high temperature environment.
Wear protective gloves, goggles and protective clothing during operation to prevent direct skin contact with liquid or vapor.
In case of leakage, it should be treated immediately with inert absorbent materials (such as diatomaceous earth) and cleaned up under ventilated conditions.
Avoid contact with water, oxidants and acidic substances to prevent violent reactions.
In case of contact with skin or eyes, rinse immediately with plenty of water for at least 15 minutes and seek medical help.
Residues or waste liquids should be collected and sealed and entrusted to professional hazardous waste treatment agencies for disposal.
1. What is the difference between tetrakis (ethylmethylamino) zirconium and tetrakis (dimethylamino) zirconium?
TEMAZ, with its ethyl and methyl substituents, has a higher molecular weight and slightly lower volatility. However, it surpasses TDMAZ in high-temperature stability and film quality, making it more suitable for high-temperature ALD processes.
2. Can TEMAZ be mixed with other metal-organic precursors?
Yes. Tetrakis (ethylmethylamino) zirconium can be used with Hf, Ti, and Al precursors to deposit complex oxide films such as ZrHfO₂ or ZrAlOₓ.
3. How can I determine if TEMAZ is suitable for semiconductor processing?
Typically, it must meet a purity of ≥99.999%, with metal impurities (such as Fe, Na, and K) below 1 ppm, and be accompanied by TDS and GC analysis reports.
For more information or to purchase tetrakis (ethylmethylamino) zirconium, please feel free to contact us via email or WhatsApp.
