 |
Name: Titanium (dimethylamide) tetrakis; TDMAT
MF: Ti[N(CH3)2]4
MW: 224.17
CAS: 3275-24-9
Appearance: yellow to orange liquid
Storage conditions: store in flammable products area
Titanium Nitride (TiN) Barriers & Electrodes
Essential ALD precursor for depositing TiN diffusion barriers and electrodes in logic and memory devices.
High-κ Gate Dielectrics
Used in TiO₂ thin-film growth for high-dielectric constant layers in advanced transistors and capacitors.
DRAM & NAND Fabrication
Applied in capacitor electrodes and barrier layers for high-density memory chips.
Hard Mask & Spacer Materials
Contributes to precision in lithography processes at sub-10 nm nodes.
R&D in Semiconductor Materials
Widely adopted in thin-film research, integration studies, and next-generation process development.
Custom packaging for R&D or production scale.
If you have any inquiries, feel free to reach out to us via the email or WhatsApp.
Name: Titanium (dimethylamide) tetrakis; TDMAT
MF: Ti[N(CH3)2]4
MW: 224.17
CAS: 3275-24-9
Appearance: yellow to orange liquid
Storage conditions: store in flammable products area
Titanium Nitride (TiN) Barriers & Electrodes
Essential ALD precursor for depositing TiN diffusion barriers and electrodes in logic and memory devices.
High-κ Gate Dielectrics
Used in TiO₂ thin-film growth for high-dielectric constant layers in advanced transistors and capacitors.
DRAM & NAND Fabrication
Applied in capacitor electrodes and barrier layers for high-density memory chips.
Hard Mask & Spacer Materials
Contributes to precision in lithography processes at sub-10 nm nodes.
R&D in Semiconductor Materials
Widely adopted in thin-film research, integration studies, and next-generation process development.
Custom packaging for R&D or production scale.
If you have any inquiries, feel free to reach out to us via the email or WhatsApp.
![Tris(N-Methylethanaminato)[(2-Methyl-2-Propanyl)Imino]Niobium](http://ilrorwxhlpppln5m.ldycdn.com/cloud/lrBpiKpnliSRilqnppkkkp/864150-640-640.png)
