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Molecular Weight: 410.9
Melting Point: <-50 °C
Boiling Point: 79 °C0.1 mm Hg(lit.)
Storage Conditions: 2-8°C
Solubility: Soluble in organic solvents such as hexane, toluene, etc.
Stability: Highly sensitive to air and moisture, should be stored and used in an inert atmosphere.
Tetrakis(ethylmethylamino) hafnium is extremely pure and contains very low levels of metallic impurities, making it suitable for demanding semiconductor processes and nano-thin film manufacturing.
Tetrakis(ethylmethylamino) hafnium exhibits excellent thermal stability within the ALD/CVD temperature range, producing clean decomposition products and enabling the formation of high-quality HfO₂ films.
Tetrakis (Ethylmethylamino) Hafnium has a moderate vapor pressure and high transfer efficiency, ensuring uniform distribution of the precursor within the deposition chamber, improving film density and uniformity.
It is compatible with a variety of oxygen and nitrogen source precursors (such as H₂O, O₃, and NH₃), supporting the deposition of a wide range of metal oxide and nitride systems.
Tetrakis (ethylmethylamino) hafnium is widely used in the fabrication of high-k dielectric layers for key devices such as CMOS transistors, DRAM capacitors, and logic chips.
As a highly efficient Hf precursor, TEMAH reacts with H₂O or O₃ in the ALD process to form dense and uniform HfO₂ films, widely used in advanced process nodes.
In CVD applications, tetrakis(ethylmethylamino) hafnium exhibits excellent reactivity, enabling the deposition of high-quality hafnium oxide films for optical coatings and microelectronic devices.
Its stable decomposition properties also make it potentially applicable in the preparation of nanostructures, high-refractive-index films, and optical sensors.
Tetrakis(ethylmethylamino) hafnium reacts easily with air or moisture and should be stored under inert gas protection.
It is recommended to store in a dry, ventilated and cool place, and the container must be tightly sealed.
Avoid contact with oxidants, acids and alcohols to prevent decomposition or combustion.
Wear gloves, protective glasses and protective clothing during operation to avoid skin contact or inhalation of vapor.
In case of leakage, use an inert adsorbent (such as diatomaceous earth) to absorb it and dispose of it safely under ventilated conditions.
TEMAH has higher thermal stability and lower vapor pressure, making it suitable for higher-temperature processes, while TDMAH is more suitable for lower-temperature ALD processes.
2. What oxygen source is commonly used in ALD for this product?
This product is most commonly used in combination with ozone (O₃) or water (H₂O) to produce high-purity, high-k films.
3. Can tetrakis(ethylmethylamino) hafnium be customized?
We support customization of different purity levels (e.g., 99.9%, 99.999%) and packaging formats (e.g., 50 mL, 100 mL cylinders) to meet experimental or mass production needs.
For more information or to purchase tetrakis(ethylmethylamino) hafnium, please feel free to contact us via email or WhatsApp.
Molecular Weight: 410.9
Melting Point: <-50 °C
Boiling Point: 79 °C0.1 mm Hg(lit.)
Storage Conditions: 2-8°C
Solubility: Soluble in organic solvents such as hexane, toluene, etc.
Stability: Highly sensitive to air and moisture, should be stored and used in an inert atmosphere.
Tetrakis(ethylmethylamino) hafnium is extremely pure and contains very low levels of metallic impurities, making it suitable for demanding semiconductor processes and nano-thin film manufacturing.
Tetrakis(ethylmethylamino) hafnium exhibits excellent thermal stability within the ALD/CVD temperature range, producing clean decomposition products and enabling the formation of high-quality HfO₂ films.
Tetrakis (Ethylmethylamino) Hafnium has a moderate vapor pressure and high transfer efficiency, ensuring uniform distribution of the precursor within the deposition chamber, improving film density and uniformity.
It is compatible with a variety of oxygen and nitrogen source precursors (such as H₂O, O₃, and NH₃), supporting the deposition of a wide range of metal oxide and nitride systems.
Tetrakis (ethylmethylamino) hafnium is widely used in the fabrication of high-k dielectric layers for key devices such as CMOS transistors, DRAM capacitors, and logic chips.
As a highly efficient Hf precursor, TEMAH reacts with H₂O or O₃ in the ALD process to form dense and uniform HfO₂ films, widely used in advanced process nodes.
In CVD applications, tetrakis(ethylmethylamino) hafnium exhibits excellent reactivity, enabling the deposition of high-quality hafnium oxide films for optical coatings and microelectronic devices.
Its stable decomposition properties also make it potentially applicable in the preparation of nanostructures, high-refractive-index films, and optical sensors.
Tetrakis(ethylmethylamino) hafnium reacts easily with air or moisture and should be stored under inert gas protection.
It is recommended to store in a dry, ventilated and cool place, and the container must be tightly sealed.
Avoid contact with oxidants, acids and alcohols to prevent decomposition or combustion.
Wear gloves, protective glasses and protective clothing during operation to avoid skin contact or inhalation of vapor.
In case of leakage, use an inert adsorbent (such as diatomaceous earth) to absorb it and dispose of it safely under ventilated conditions.
TEMAH has higher thermal stability and lower vapor pressure, making it suitable for higher-temperature processes, while TDMAH is more suitable for lower-temperature ALD processes.
2. What oxygen source is commonly used in ALD for this product?
This product is most commonly used in combination with ozone (O₃) or water (H₂O) to produce high-purity, high-k films.
3. Can tetrakis(ethylmethylamino) hafnium be customized?
We support customization of different purity levels (e.g., 99.9%, 99.999%) and packaging formats (e.g., 50 mL, 100 mL cylinders) to meet experimental or mass production needs.
For more information or to purchase tetrakis(ethylmethylamino) hafnium, please feel free to contact us via email or WhatsApp.
