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Name: Tetrakis (ethylmethylamino) hafnium (IV); TEMAH
MF: Hf[N(CH3)(C2H5)]4
MW: 410.9
CAS: 352535-01-4
Appearance: Colorless to yellow liquid
Storage conditions: 2-8°C
High-k Gate Dielectrics
ALD precursor for depositing HfO₂ films in advanced logic and memory devices, enabling transistor scaling and improved leakage control.
Metal–Insulator–Metal (MIM) Capacitors
Used in high-density DRAM and analog/RF circuits for superior dielectric performance.
Hard Mask & Spacer Materials
Contributes to patterning precision in advanced lithography nodes.
Research & Development
For thin-film process optimization in next-generation semiconductor devices.
High-Purity Hafnium Compounds
Intermediate for synthesizing other hafnium-based ALD/CVD precursors.
Custom packaging for R&D or production scale.
If you have any inquiries, feel free to reach out to us via the email or WhatsApp.
Name: Tetrakis (ethylmethylamino) hafnium (IV); TEMAH
MF: Hf[N(CH3)(C2H5)]4
MW: 410.9
CAS: 352535-01-4
Appearance: Colorless to yellow liquid
Storage conditions: 2-8°C
High-k Gate Dielectrics
ALD precursor for depositing HfO₂ films in advanced logic and memory devices, enabling transistor scaling and improved leakage control.
Metal–Insulator–Metal (MIM) Capacitors
Used in high-density DRAM and analog/RF circuits for superior dielectric performance.
Hard Mask & Spacer Materials
Contributes to patterning precision in advanced lithography nodes.
Research & Development
For thin-film process optimization in next-generation semiconductor devices.
High-Purity Hafnium Compounds
Intermediate for synthesizing other hafnium-based ALD/CVD precursors.
Custom packaging for R&D or production scale.
If you have any inquiries, feel free to reach out to us via the email or WhatsApp.
![Tris(N-Methylethanaminato)[(2-Methyl-2-Propanyl)Imino]Niobium](http://ilrorwxhlpppln5m.ldycdn.com/cloud/lrBpiKpnliSRilqnppkkkp/864150-640-640.png)
