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Appearance: White solid
Molecular Weight: 267.53
Melting Point: 57-60 °C(lit.)
Boiling Point: 80°C 0,1mm
Storage Conditions: Water-free area
Solubility: Soluble in organic solvents, but has no solubility in water.
Tetrakis (dimethylamino) zirconium is produced through high-precision distillation under an inert atmosphere, ensuring extremely low levels of metallic impurities. It is suitable for semiconductor processes requiring extremely high purity.
This compound vaporizes at relatively low temperatures, ensuring efficient transport and stable decomposition during ALD and CVD processes, improving film uniformity.
Tetrakis (dimethylamino) zirconium reacts with a variety of oxidants, including H₂O, O₃, and O₂ plasma, to produce high-quality ZrO₂ films, demonstrating excellent process compatibility.
In addition to ZrO₂ thin film deposition, it can also be used for the preparation of materials such as ZrN and ZrSiO₄. It is ideal for the preparation of high-k dielectric materials and high-temperature protective layers.
Tetrakis (dimethylamino) zirconium is a commonly used precursor for forming high-dielectric-constant ZrO₂ thin films, which are widely used in logic chips, memory chips, and metal oxide semiconductor devices.
Under CVD reaction conditions, TDMAZ can stably decompose to form a high-purity zirconium oxide coating, which is commonly used in the preparation of high-temperature thermal insulation coatings and wear-resistant films.
C8H24N4Zr can be used as a zirconium source in the preparation of transparent ceramics and optical coating materials, improving the refractive index and stability of the materials.
Tetrakis (dimethylamino) zirconium is also commonly used in nanomaterial research, metal-organic framework (MOF) construction, and functional material development.
Tetrakis (dimethylamino) zirconium reacts easily with moisture and oxygen and should be stored in a dry, sealed container under nitrogen or argon.
Wear protective gloves, protective glasses and protective clothing when using to avoid direct skin contact.
In case of leakage, cover with inert absorbent material (such as diatomaceous earth) and handle under ventilated conditions.
Avoid contact with open flames. Use dry powder or CO₂ fire extinguishers when extinguishing fires. Do not use water.
The residues should be collected and sealed and handed over to a qualified unit for hazardous waste disposal.
1. What is the primary application of tetrakis (dimethylamino) zirconium?
It is primarily used as a metal precursor in ALD and CVD processes to deposit high-quality ZrO₂ thin films. It has a wide range of applications in semiconductors, electronic materials, optical coatings, and other fields.
2. Can C8H24N4Zr be used with other metal precursors?
Yes. It is often used in conjunction with Hf and Ti-based organometallic precursors to prepare mixed oxides or composite thin films.
3. What precautions should be taken during transportation of this product?
During transportation, avoid direct sunlight and vibration, and use explosion-proof and moisture-proof packaging. Air transportation must comply with dangerous goods transportation standards (UN numbers can be determined from the MSDS).
For more information or to purchase tetrakis (dimethylamino) zirconium, please feel free to contact us via email or WhatsApp.
Appearance: White solid
Molecular Weight: 267.53
Melting Point: 57-60 °C(lit.)
Boiling Point: 80°C 0,1mm
Storage Conditions: Water-free area
Solubility: Soluble in organic solvents, but has no solubility in water.
Tetrakis (dimethylamino) zirconium is produced through high-precision distillation under an inert atmosphere, ensuring extremely low levels of metallic impurities. It is suitable for semiconductor processes requiring extremely high purity.
This compound vaporizes at relatively low temperatures, ensuring efficient transport and stable decomposition during ALD and CVD processes, improving film uniformity.
Tetrakis (dimethylamino) zirconium reacts with a variety of oxidants, including H₂O, O₃, and O₂ plasma, to produce high-quality ZrO₂ films, demonstrating excellent process compatibility.
In addition to ZrO₂ thin film deposition, it can also be used for the preparation of materials such as ZrN and ZrSiO₄. It is ideal for the preparation of high-k dielectric materials and high-temperature protective layers.
Tetrakis (dimethylamino) zirconium is a commonly used precursor for forming high-dielectric-constant ZrO₂ thin films, which are widely used in logic chips, memory chips, and metal oxide semiconductor devices.
Under CVD reaction conditions, TDMAZ can stably decompose to form a high-purity zirconium oxide coating, which is commonly used in the preparation of high-temperature thermal insulation coatings and wear-resistant films.
C8H24N4Zr can be used as a zirconium source in the preparation of transparent ceramics and optical coating materials, improving the refractive index and stability of the materials.
Tetrakis (dimethylamino) zirconium is also commonly used in nanomaterial research, metal-organic framework (MOF) construction, and functional material development.
Tetrakis (dimethylamino) zirconium reacts easily with moisture and oxygen and should be stored in a dry, sealed container under nitrogen or argon.
Wear protective gloves, protective glasses and protective clothing when using to avoid direct skin contact.
In case of leakage, cover with inert absorbent material (such as diatomaceous earth) and handle under ventilated conditions.
Avoid contact with open flames. Use dry powder or CO₂ fire extinguishers when extinguishing fires. Do not use water.
The residues should be collected and sealed and handed over to a qualified unit for hazardous waste disposal.
1. What is the primary application of tetrakis (dimethylamino) zirconium?
It is primarily used as a metal precursor in ALD and CVD processes to deposit high-quality ZrO₂ thin films. It has a wide range of applications in semiconductors, electronic materials, optical coatings, and other fields.
2. Can C8H24N4Zr be used with other metal precursors?
Yes. It is often used in conjunction with Hf and Ti-based organometallic precursors to prepare mixed oxides or composite thin films.
3. What precautions should be taken during transportation of this product?
During transportation, avoid direct sunlight and vibration, and use explosion-proof and moisture-proof packaging. Air transportation must comply with dangerous goods transportation standards (UN numbers can be determined from the MSDS).
For more information or to purchase tetrakis (dimethylamino) zirconium, please feel free to contact us via email or WhatsApp.
