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Name: Tetrakis (dimethylamino) hafnium (IV); TDMAH
MF: Hf[N(CH3)2]4
MW: 354.796
CAS: 19782-68-4
Appearance: white to off-white crystal
Storage conditions: anhydrous and anaerobic
High-κ Gate Dielectrics
ALD precursor for depositing HfO₂ films in advanced logic and memory devices, enabling transistor scaling and improved leakage control.
Metal–Insulator–Metal (MIM) Capacitors
Used in high-density DRAM and analog/RF circuits for superior dielectric performance.
Hard Mask & Spacer Materials
Contributes to patterning precision in advanced lithography nodes.
Research & Development
For thin-film process optimization in next-generation semiconductor devices.
High-Purity Hafnium Compounds
Intermediate for synthesizing other hafnium-based ALD/CVD precursors.
Custom packaging for R&D or production scale.
If you have any inquiries, feel free to reach out to us via the email or WhatsApp.
Name: Tetrakis (dimethylamino) hafnium (IV); TDMAH
MF: Hf[N(CH3)2]4
MW: 354.796
CAS: 19782-68-4
Appearance: white to off-white crystal
Storage conditions: anhydrous and anaerobic
High-κ Gate Dielectrics
ALD precursor for depositing HfO₂ films in advanced logic and memory devices, enabling transistor scaling and improved leakage control.
Metal–Insulator–Metal (MIM) Capacitors
Used in high-density DRAM and analog/RF circuits for superior dielectric performance.
Hard Mask & Spacer Materials
Contributes to patterning precision in advanced lithography nodes.
Research & Development
For thin-film process optimization in next-generation semiconductor devices.
High-Purity Hafnium Compounds
Intermediate for synthesizing other hafnium-based ALD/CVD precursors.
Custom packaging for R&D or production scale.
If you have any inquiries, feel free to reach out to us via the email or WhatsApp.
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