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Tetrakis(Dimethylamino) Hafnium

Molecular Formula: C8H24HfN4
CAS: 19782-68-4
 
Tetrakis(dimethylamino) hafnium (C8H24HfN4) is a high-purity, organometallic compound typically colorless to pale yellow with excellent thermal stability and volatility. It is widely used as a precursor for high-k dielectric films in the semiconductor industry, playing a key role in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes. Due to its excellent purity and decomposition properties, tetrakis(dimethylamino) hafnium is considered a key raw material for the preparation of HfO₂ thin films, which are widely used in microelectronics, optoelectronics, and nanotechnology.
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Tetrakis(Dimethylamino) Hafnium Basic Properties

  • Appearance: Colorless to light yellow

  • Molecular Weight: 354.796

  • Melting Point: 26-29 °C(lit.)

  • Boiling Point: 85°C/0.1mm

  • Solubility: Soluble in most organic solvents, such as hexane, toluene, etc.

Tetrakis(Dimethylamino) Hafnium Key Features

High purity and low impurity content

Tetrakis(dimethylamino) hafnium has extremely high chemical purity and extremely low impurity metal content, ensuring excellent dielectric properties and uniformity in deposited films.

Excellent thermal stability

This compound maintains a stable chemical structure even at high temperatures and resists decomposition, providing reliable support for ALD and CVD processes.

Excellent volatility and controllability

Its high vapor pressure and controlled decomposition properties make it an ideal precursor for preparing high-dielectric-constant oxides (HfO₂).

Strong compatibility and wide application

Suitable for a variety of deposition systems and compatible with a variety of nitrogen and oxygen source precursors, it is widely used in advanced chip manufacturing processes.

Tetrakis(Dimethylamino) Hafnium Main Applications

Semiconductor manufacturing

Tetrakis(dimethylamino) hafnium is an important raw material for preparing high-k dielectric layers (HfO₂), used for gate dielectric deposition in CMOS transistors, DRAM capacitors, and logic chips.

Atomic layer deposition (ALD) process

In the ALD process, Tetrakis(dimethylamino) hafnium is used to deposit dense, uniform Hf-based thin films due to its high reactivity and low residual properties.

Optoelectronics and nanomaterials

This compound is also used in optical coatings and nanostructure preparation, forming hafnium oxide layers with high refractive index and stability.

Precautions

  1. Moisture-proof storage: Tetrakis(dimethylamino) hafnium is highly sensitive to air and moisture and must be stored in a sealed container under an inert atmosphere (argon or nitrogen).

  2. Storage environment: Store in a cool, dry, well-ventilated area at a temperature between 15–25°C.

  3. Handling precautions: Wear protective gloves, goggles, and a lab coat when handling to avoid direct skin contact.

  4. Leakage disposal: In the event of an accidental leak, immediately absorb with an inert adsorbent (such as diatomaceous earth) and dispose of properly.

  5. Emergency measures: In case of contact with skin or eyes, rinse immediately with plenty of water and seek medical attention.

  6. Incompatible materials: Avoid contact with oxidizing agents, acids, or water to prevent decomposition or combustion.

FAQ

1. What oxygen source is tetrakis(dimethylamino) hafnium commonly used with in ALD processes?

It is often used with ozone (O₃) or water (H₂O) as an oxygen source to form high-purity HfO₂ films.


2. What is the packaging format for this product?

It is typically packaged in glass bottles or stainless steel containers, filled with high-purity argon gas to prevent hydrolysis.


For more information or to purchase tetrakis(dimethylamino) hafnium, please feel free to contact us via email or WhatsApp.

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