Tetrakis(Dimethylamino) Hafnium

Name: Tetrakis (dimethylamino) hafnium (IV); TDMAH
MF: Hf[N(CH3)2]4
MW: 354.796
CAS: 19782-68-4
Appearance: white to off-white crystal
Storage conditions: anhydrous and anaerobic

Key Applications

• High-κ Gate Dielectrics

ALD precursor for depositing HfO₂ films in advanced logic and memory devices, enabling transistor scaling and improved leakage control.

• Metal–Insulator–Metal (MIM) Capacitors

Used in high-density DRAM and analog/RF circuits for superior dielectric performance.

• Hard Mask & Spacer Materials

Contributes to patterning precision in advanced lithography nodes.

• Research & Development

For thin-film process optimization in next-generation semiconductor devices.

• High-Purity Hafnium Compounds

Intermediate for synthesizing other hafnium-based ALD/CVD precursors.

Custom packaging for R&D or production scale.

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