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| Synonyms | Hafnium tetradimethylamide;Hafnium(4+) dimethylamide;TDMAH: Hf(N(CH3)2)4;Tetrakis(dimethylamino)hafnium(IV) 99.999% |
| Molecular Formula | C8H24HfN4 |
| Appearance | Colorless to light yellow |
| Molecular Weight | 354.796 |
| Melting Point | 26-29 °C(lit.) |
| Boiling Point | 85°C/0.1mm |
| Solubility | Soluble in most organic solvents, such as hexane, toluene, etc. |
| Purity | ≧ 98% |
| Package Information | 100g, 500g, 1kg, or customized |
Tetrakis(dimethylamino) hafnium has extremely high chemical purity and extremely low impurity metal content, ensuring excellent dielectric properties and uniformity in deposited films.
Its high vapor pressure and controlled decomposition properties make it an ideal precursor for preparing high-dielectric-constant oxides (HfO₂).
Suitable for a variety of deposition systems and compatible with a variety of nitrogen and oxygen source precursors, it is widely used in advanced chip manufacturing processes.
Tetrakis(dimethylamino) hafnium is an important raw material for preparing high-k dielectric layers (HfO₂), used for gate dielectric deposition in CMOS transistors, DRAM capacitors, and logic chips.
In the ALD process, Tetrakis(dimethylamino) hafnium is used to deposit dense, uniform Hf-based thin films due to its high reactivity and low residual properties.
This compound is also used in optical coatings and nanostructure preparation, forming hafnium oxide layers with high refractive index and stability.
Moisture-proof storage: Tetrakis(dimethylamino) hafnium is highly sensitive to air and moisture and must be stored in a sealed container under an inert atmosphere (argon or nitrogen).
Storage environment: Store in a cool, dry, well-ventilated area at a temperature between 15–25°C.
Handling precautions: Wear protective gloves, goggles, and a lab coat when handling to avoid direct skin contact.
Leakage disposal: In the event of an accidental leak, immediately absorb with an inert adsorbent (such as diatomaceous earth) and dispose of properly.
Emergency measures: In case of contact with skin or eyes, rinse immediately with plenty of water and seek medical attention.
Incompatible materials: Avoid contact with oxidizing agents, acids, or water to prevent decomposition or combustion.
It is often used with ozone (O₃) or water (H₂O) as an oxygen source to form high-purity HfO₂ films.
2. What is the packaging format for this product?
It is typically packaged in glass bottles or stainless steel containers, filled with high-purity argon gas to prevent hydrolysis.
Wolfa professionally supplies TDMAH, supporting small-batch sampling and large-volume procurement needs. Packaging options include ordinary glass bottles, glass ampoules, metal ampoules, etc.
For product analysis reports (such as COA) or procurement consulting, please feel free to contact us at jomin@wolfabio.com at any time.
| Synonyms | Hafnium tetradimethylamide;Hafnium(4+) dimethylamide;TDMAH: Hf(N(CH3)2)4;Tetrakis(dimethylamino)hafnium(IV) 99.999% |
| Molecular Formula | C8H24HfN4 |
| Appearance | Colorless to light yellow |
| Molecular Weight | 354.796 |
| Melting Point | 26-29 °C(lit.) |
| Boiling Point | 85°C/0.1mm |
| Solubility | Soluble in most organic solvents, such as hexane, toluene, etc. |
| Purity | ≧ 98% |
| Package Information | 100g, 500g, 1kg, or customized |
Tetrakis(dimethylamino) hafnium has extremely high chemical purity and extremely low impurity metal content, ensuring excellent dielectric properties and uniformity in deposited films.
Its high vapor pressure and controlled decomposition properties make it an ideal precursor for preparing high-dielectric-constant oxides (HfO₂).
Suitable for a variety of deposition systems and compatible with a variety of nitrogen and oxygen source precursors, it is widely used in advanced chip manufacturing processes.
Tetrakis(dimethylamino) hafnium is an important raw material for preparing high-k dielectric layers (HfO₂), used for gate dielectric deposition in CMOS transistors, DRAM capacitors, and logic chips.
In the ALD process, Tetrakis(dimethylamino) hafnium is used to deposit dense, uniform Hf-based thin films due to its high reactivity and low residual properties.
This compound is also used in optical coatings and nanostructure preparation, forming hafnium oxide layers with high refractive index and stability.
Moisture-proof storage: Tetrakis(dimethylamino) hafnium is highly sensitive to air and moisture and must be stored in a sealed container under an inert atmosphere (argon or nitrogen).
Storage environment: Store in a cool, dry, well-ventilated area at a temperature between 15–25°C.
Handling precautions: Wear protective gloves, goggles, and a lab coat when handling to avoid direct skin contact.
Leakage disposal: In the event of an accidental leak, immediately absorb with an inert adsorbent (such as diatomaceous earth) and dispose of properly.
Emergency measures: In case of contact with skin or eyes, rinse immediately with plenty of water and seek medical attention.
Incompatible materials: Avoid contact with oxidizing agents, acids, or water to prevent decomposition or combustion.
It is often used with ozone (O₃) or water (H₂O) as an oxygen source to form high-purity HfO₂ films.
2. What is the packaging format for this product?
It is typically packaged in glass bottles or stainless steel containers, filled with high-purity argon gas to prevent hydrolysis.
Wolfa professionally supplies TDMAH, supporting small-batch sampling and large-volume procurement needs. Packaging options include ordinary glass bottles, glass ampoules, metal ampoules, etc.
For product analysis reports (such as COA) or procurement consulting, please feel free to contact us at jomin@wolfabio.com at any time.
