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Molecular Formula: C2H7NNb
Appearance: Purple-black crystal
Molecular Weight: 137.99
Boiling Point: 100℃/0.1mm
Solubility: Soluble in common organic solvents such as toluene, ethane, tetrahydrofuran and ethers, and will react violently with substances containing active hydrogen such as water and alcohols
Due to its symmetrical molecular structure and controllable reaction, pentakis(dimethylamino)niobium(V) can produce dense, smooth, and uniform Nb₂O₅ or NbN thin films, improving device uniformity.
TDMANb offers high purity and excellent vaporization properties, enabling stable vapor transport even at low temperatures. It is ideally suited for precision ALD and CVD processes, ensuring efficient, uniform, and reproducible delivery of precursors into the reaction chamber.
Our pentakis(dimethylamino)niobium(V) allows for the deposition of high-quality niobium-based thin films at relatively low substrate temperatures, enabling their application on temperature-sensitive substrates (such as flexible electronics) and helping to reduce film stress and defect density.
This compound has a low decomposition temperature and produces clean reaction products, making it suitable for use in semiconductor, optoelectronic, energy storage, and sensor manufacturing, and is process-friendly for high-end materials.
In CVD and ALD processes, pentakis(dimethylamino)miobium(V) is the preferred precursor for forming niobium oxide (Nb₂O₅) and niobium nitride (NbN) thin films. These thin films are used in high-end structures such as capacitors, dielectric layers, and gate electrodes.
As a highly reactive metal source, it can form a dense protective layer on metal or ceramic surfaces, enhancing corrosion resistance and mechanical strength, making it suitable for use in harsh environments.
NbO2 deposited via TDMANb exhibits a high refractive index and low absorption, making it an ideal material for the production of high-performance antireflection coatings, highly reflective mirrors, filters, and other optical components.
Pentakis(dimethylamino)niobium(V) will rapidly decompose and lose its quality when in contact with water or moisture. It should be stored in a dry, sealed container under the protection of inert gas.
TDMANb is flammable and should be stored away from light and heat. It is strictly forbidden to contact with open flames during operation. It must be carried out in a glove box filled with high-purity inert gas or in a closed delivery system.
It is strictly forbidden to contact or store it with any substances containing active hydrogen or highly reactive substances such as water, oxidants, strong acids, alcohols, etc. to prevent violent or even explosive chemical reactions.
Wear protective gloves, protective glasses and lab coat during operation to avoid direct contact with skin and eyes.
In case of accidental leakage, cover it immediately with inert absorbent material (such as diatomaceous earth) and avoid washing with water.
During transportation, the product must be kept at low temperature and protected from vibration, and UN certified containers that meet the standards must be used.
1. Does the purity of pentakis(dimethylamino)niobium(V) significantly affect film quality?
Yes, higher purity reduces impurity levels in the film, resulting in better electrical properties and surface uniformity. Therefore, high-purity (≥99%) products are recommended.
2. What deposition techniques are suitable for TDMANb?
It is widely used in ALD (atomic layer deposition) and CVD (chemical vapor deposition) processes, and can be used to deposit Nb₂O₅, NbN, and related composite thin films.
For more information or to purchase Pentakis(Dimethylamino)Niobium(V)(TDMANb), please feel free to contact us via email or WhatsApp.
Molecular Formula: C2H7NNb
Appearance: Purple-black crystal
Molecular Weight: 137.99
Boiling Point: 100℃/0.1mm
Solubility: Soluble in common organic solvents such as toluene, ethane, tetrahydrofuran and ethers, and will react violently with substances containing active hydrogen such as water and alcohols
Due to its symmetrical molecular structure and controllable reaction, pentakis(dimethylamino)niobium(V) can produce dense, smooth, and uniform Nb₂O₅ or NbN thin films, improving device uniformity.
TDMANb offers high purity and excellent vaporization properties, enabling stable vapor transport even at low temperatures. It is ideally suited for precision ALD and CVD processes, ensuring efficient, uniform, and reproducible delivery of precursors into the reaction chamber.
Our pentakis(dimethylamino)niobium(V) allows for the deposition of high-quality niobium-based thin films at relatively low substrate temperatures, enabling their application on temperature-sensitive substrates (such as flexible electronics) and helping to reduce film stress and defect density.
This compound has a low decomposition temperature and produces clean reaction products, making it suitable for use in semiconductor, optoelectronic, energy storage, and sensor manufacturing, and is process-friendly for high-end materials.
In CVD and ALD processes, pentakis(dimethylamino)miobium(V) is the preferred precursor for forming niobium oxide (Nb₂O₅) and niobium nitride (NbN) thin films. These thin films are used in high-end structures such as capacitors, dielectric layers, and gate electrodes.
As a highly reactive metal source, it can form a dense protective layer on metal or ceramic surfaces, enhancing corrosion resistance and mechanical strength, making it suitable for use in harsh environments.
NbO2 deposited via TDMANb exhibits a high refractive index and low absorption, making it an ideal material for the production of high-performance antireflection coatings, highly reflective mirrors, filters, and other optical components.
Pentakis(dimethylamino)niobium(V) will rapidly decompose and lose its quality when in contact with water or moisture. It should be stored in a dry, sealed container under the protection of inert gas.
TDMANb is flammable and should be stored away from light and heat. It is strictly forbidden to contact with open flames during operation. It must be carried out in a glove box filled with high-purity inert gas or in a closed delivery system.
It is strictly forbidden to contact or store it with any substances containing active hydrogen or highly reactive substances such as water, oxidants, strong acids, alcohols, etc. to prevent violent or even explosive chemical reactions.
Wear protective gloves, protective glasses and lab coat during operation to avoid direct contact with skin and eyes.
In case of accidental leakage, cover it immediately with inert absorbent material (such as diatomaceous earth) and avoid washing with water.
During transportation, the product must be kept at low temperature and protected from vibration, and UN certified containers that meet the standards must be used.
1. Does the purity of pentakis(dimethylamino)niobium(V) significantly affect film quality?
Yes, higher purity reduces impurity levels in the film, resulting in better electrical properties and surface uniformity. Therefore, high-purity (≥99%) products are recommended.
2. What deposition techniques are suitable for TDMANb?
It is widely used in ALD (atomic layer deposition) and CVD (chemical vapor deposition) processes, and can be used to deposit Nb₂O₅, NbN, and related composite thin films.
For more information or to purchase Pentakis(Dimethylamino)Niobium(V)(TDMANb), please feel free to contact us via email or WhatsApp.
