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Name: Pentakis(Dimethylamino)Niobium; TDMANb
MF: C2H7NNb
MW: 137.99
CAS: 19824-58-9
Appearance: Violet-black Crystals
High volatility and good thermal stability suitable for vapor-phase deposition
Produces conformal thin films with excellent step coverage
Compatible with semiconductor-grade bubbler and gas delivery systems
Requires inert handling conditions (N₂ or Ar)
Semiconductors & Microelectronics
Precursor for ALD/CVD Nb₂O₅ thin films, applied in high-k dielectric layers and logic/memory devices.
Barrier & Electrode Layers
Used in NbN deposition for conductive layers and diffusion barriers.
Materials Research
Niobium source for advanced studies in superconducting, dielectric, and catalytic materials.
Custom packaging for R&D or production scale.
If you have any inquiries, feel free to reach out to us via the email or WhatsApp.
Name: Pentakis(Dimethylamino)Niobium; TDMANb
MF: C2H7NNb
MW: 137.99
CAS: 19824-58-9
Appearance: Violet-black Crystals
High volatility and good thermal stability suitable for vapor-phase deposition
Produces conformal thin films with excellent step coverage
Compatible with semiconductor-grade bubbler and gas delivery systems
Requires inert handling conditions (N₂ or Ar)
Semiconductors & Microelectronics
Precursor for ALD/CVD Nb₂O₅ thin films, applied in high-k dielectric layers and logic/memory devices.
Barrier & Electrode Layers
Used in NbN deposition for conductive layers and diffusion barriers.
Materials Research
Niobium source for advanced studies in superconducting, dielectric, and catalytic materials.
Custom packaging for R&D or production scale.
If you have any inquiries, feel free to reach out to us via the email or WhatsApp.
