 |
Molecular Formula: C13H33N4Nb
Molecular Weight: 338.34
Solubility: Soluble in common organic solvents, such as hydrocarbons, ethers, and amines
Purity: >= 98%
Package Information: 100g, 500g, 1kg, or customized
TBTEMNb has a moderate vapor pressure, making it ideal as a precursor for ALD and CVD. It also exhibits stable evaporation with no significant residue or carbon buildup, which is beneficial for obtaining high-purity films.
Its tert-butylimino and ethylmethylamino ligand structures ensure a predictable and clean decomposition pathway, enabling the formation of uniform, dense NbNx, NbOx, or Nb-containing films at low temperatures.
It can provide semiconductor-grade quality, supply reliable raw materials for advanced processes, and reduce defects caused by metal or carbon impurities in thin films.
It can operate stably in a variety of mainstream ALD/CVD equipment, including thermal ALD and plasma ALD, making it suitable for R&D and large-scale mass production.
Nb2O5 thin films deposited using TBTEMNb through ALD or CVD processes are one of the core materials for constructing high-performance multilayer interference filters, antireflection coatings, etc., due to their high refractive index, and are applied in systems such as laser systems and precision optical instruments.
TBTEMNb can be used as a high-performance niobium source to explore doped niobate thin films, niobium-based composite oxides, etc., to meet customized requirements for specific optical or dielectric constants.
Nb2O5 thin films can be used as dielectric layers in thin-film capacitors, ion storage layers in electrochromic devices, or components of metal-insulator-metal structures.
TBTEMNb readily reacts with water or moisture in the air, and may decompose and release amines. It must be handled under dry, inert gas protection conditions.
It is usually necessary to use opaque, sealed metal or glass containers and maintain a dry, low-oxygen environment.
Organometallic amines are irritating. If contact occurs, rinse thoroughly with plenty of water and a mild detergent, and remove the contaminated clothing.
Ensure good ventilation during use. If operating in a factory, a fume hood or closed conveyor system should be installed.
This compound may react dangerously with strong oxidizing agents and should be stored in strictly separate areas.
1. What is (tert-Butylimino)tris(ethylmethylamino)niobium?
It is a metal-organic niobium precursor used in ALD/CVD, abbreviated as TBTEMNb, mainly applied to the deposition of NbN, Nb2O5 and other thin films.
2. What precursors does TBTEMNb typically pair with in ALD?
In the preparation of NbNx, it is often combined with ammonia or plasma nitrogen sources; in the preparation of NbOx, it is often combined with oxygen sources such as water, ozone, or oxygen.
We are a professional (tert-Butylimino)tris(ethylmethylamino) niobium supplier. For more information or to purchase (tert-Butylimino)tris(ethylmethylamino) niobium(TBTEMNb), please feel free to contact us via jomin@wolfabio.com.
Molecular Formula: C13H33N4Nb
Molecular Weight: 338.34
Solubility: Soluble in common organic solvents, such as hydrocarbons, ethers, and amines
Purity: >= 98%
Package Information: 100g, 500g, 1kg, or customized
TBTEMNb has a moderate vapor pressure, making it ideal as a precursor for ALD and CVD. It also exhibits stable evaporation with no significant residue or carbon buildup, which is beneficial for obtaining high-purity films.
Its tert-butylimino and ethylmethylamino ligand structures ensure a predictable and clean decomposition pathway, enabling the formation of uniform, dense NbNx, NbOx, or Nb-containing films at low temperatures.
It can provide semiconductor-grade quality, supply reliable raw materials for advanced processes, and reduce defects caused by metal or carbon impurities in thin films.
It can operate stably in a variety of mainstream ALD/CVD equipment, including thermal ALD and plasma ALD, making it suitable for R&D and large-scale mass production.
Nb2O5 thin films deposited using TBTEMNb through ALD or CVD processes are one of the core materials for constructing high-performance multilayer interference filters, antireflection coatings, etc., due to their high refractive index, and are applied in systems such as laser systems and precision optical instruments.
TBTEMNb can be used as a high-performance niobium source to explore doped niobate thin films, niobium-based composite oxides, etc., to meet customized requirements for specific optical or dielectric constants.
Nb2O5 thin films can be used as dielectric layers in thin-film capacitors, ion storage layers in electrochromic devices, or components of metal-insulator-metal structures.
TBTEMNb readily reacts with water or moisture in the air, and may decompose and release amines. It must be handled under dry, inert gas protection conditions.
It is usually necessary to use opaque, sealed metal or glass containers and maintain a dry, low-oxygen environment.
Organometallic amines are irritating. If contact occurs, rinse thoroughly with plenty of water and a mild detergent, and remove the contaminated clothing.
Ensure good ventilation during use. If operating in a factory, a fume hood or closed conveyor system should be installed.
This compound may react dangerously with strong oxidizing agents and should be stored in strictly separate areas.
1. What is (tert-Butylimino)tris(ethylmethylamino)niobium?
It is a metal-organic niobium precursor used in ALD/CVD, abbreviated as TBTEMNb, mainly applied to the deposition of NbN, Nb2O5 and other thin films.
2. What precursors does TBTEMNb typically pair with in ALD?
In the preparation of NbNx, it is often combined with ammonia or plasma nitrogen sources; in the preparation of NbOx, it is often combined with oxygen sources such as water, ozone, or oxygen.
We are a professional (tert-Butylimino)tris(ethylmethylamino) niobium supplier. For more information or to purchase (tert-Butylimino)tris(ethylmethylamino) niobium(TBTEMNb), please feel free to contact us via jomin@wolfabio.com.
