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Molecular Formula: HfO2
Appearance: White powder
Molecular Weight: 210.49
Melting Point: 2810 °C
Density: 9.68 g/mL at 25 °C(lit.)
Refractive Index: 2.13 (1700 nm)
Solubility: Insoluble in water, hydrochloric acid, and nitric acid; soluble in concentrated sulfuric acid and hydrofluoric acid
Package Information: 100g, 500g, 1kg, or customized
Hafnium Oxide has a dielectric constant of approximately 20–25, making it an important high-k material in silicon-based microelectronics. It is used to replace traditional SiO₂ as the gate dielectric layer, significantly reducing leakage current and improving device performance.
HfO2 maintains its crystal structure at high temperatures and forms stable interfaces with most metals and oxides, making it widely used in semiconductor manufacturing and refractory materials.
This compound exhibits excellent optical transparency in the ultraviolet to infrared band, while also possessing a high refractive index, which can enhance the stability and durability of optical systems.
HfO2 can provide ultra-high purity grades of 4N–6N, meeting the needs of high-end applications such as semiconductors and optical coatings that are extremely sensitive to the impurity content of materials.
Hafnium Oxide, as a high-k gate dielectric material, is widely used in advanced CMOS logic chips and memory devices at technology nodes of 45 nanometers and below.
In this field, HfO2 is one of the core materials for preparing high-quality optical coatings, and is particularly suitable for optical components in high-power laser systems and extreme ultraviolet lithography equipment.
Due to their high melting point and high stability, they are used in the preparation of refractory materials for high-temperature furnaces, ceramics, aerospace thermal protection systems, and other applications.
Hafnium Oxide should be stored in a cool, dry, and well-ventilated warehouse, keeping the containers tightly sealed to prevent moisture and clumping.
It should be stored separately from strong acids, strong bases and strong oxidizing agents to avoid unnecessary chemical reactions, and kept away from fire and heat sources.
Because the fine dust generated by this product can easily enter the respiratory system, it is essential to wear a dust mask and operate in a well-ventilated environment.
HfO2 used in semiconductors must be packaged in a clean environment to avoid contamination that could affect device yield.
Although this product poses relatively little direct harm to the environment, it is still recommended that it be treated as general industrial solid waste and disposed of in accordance with local regulations.
When large quantities are discarded, consider recycling. Avoid discharging into sewers or the natural environment.
1. What is Hafnium Oxide?
Hafnium Oxide is an important inorganic material in the semiconductor and optics industries, possessing high dielectric constant, high melting point, and extremely high chemical stability. Its chemical formula is HfO2, its molecular weight is 210.49, its melting point is 2810℃, and its density is 9.68 g/mL at 25 °C (lit.).
2. Why is HfO2 suitable for optical coatings?
Primarily due to its high refractive index, wide spectral transmittance (from ultraviolet to infrared), high hardness, and excellent chemical and thermal stability. This combination of properties allows for the design of stable, durable multilayer optical films, meeting the stringent requirements of precision optical systems for optical performance and reliability.
3. What is the difference between HfO2 and ZrO2?
Both have similar properties, but Hafnium Oxide has a higher dielectric constant and better thermal stability, making it suitable for more demanding electronic materials.
We are a professional Hafnium Oxide supplier. For more information or to purchase Hafnium Oxide(HfO2), please feel free to contact us via jomin@wolfabio.com.
Molecular Formula: HfO2
Appearance: White powder
Molecular Weight: 210.49
Melting Point: 2810 °C
Density: 9.68 g/mL at 25 °C(lit.)
Refractive Index: 2.13 (1700 nm)
Solubility: Insoluble in water, hydrochloric acid, and nitric acid; soluble in concentrated sulfuric acid and hydrofluoric acid
Package Information: 100g, 500g, 1kg, or customized
Hafnium Oxide has a dielectric constant of approximately 20–25, making it an important high-k material in silicon-based microelectronics. It is used to replace traditional SiO₂ as the gate dielectric layer, significantly reducing leakage current and improving device performance.
HfO2 maintains its crystal structure at high temperatures and forms stable interfaces with most metals and oxides, making it widely used in semiconductor manufacturing and refractory materials.
This compound exhibits excellent optical transparency in the ultraviolet to infrared band, while also possessing a high refractive index, which can enhance the stability and durability of optical systems.
HfO2 can provide ultra-high purity grades of 4N–6N, meeting the needs of high-end applications such as semiconductors and optical coatings that are extremely sensitive to the impurity content of materials.
Hafnium Oxide, as a high-k gate dielectric material, is widely used in advanced CMOS logic chips and memory devices at technology nodes of 45 nanometers and below.
In this field, HfO2 is one of the core materials for preparing high-quality optical coatings, and is particularly suitable for optical components in high-power laser systems and extreme ultraviolet lithography equipment.
Due to their high melting point and high stability, they are used in the preparation of refractory materials for high-temperature furnaces, ceramics, aerospace thermal protection systems, and other applications.
Hafnium Oxide should be stored in a cool, dry, and well-ventilated warehouse, keeping the containers tightly sealed to prevent moisture and clumping.
It should be stored separately from strong acids, strong bases and strong oxidizing agents to avoid unnecessary chemical reactions, and kept away from fire and heat sources.
Because the fine dust generated by this product can easily enter the respiratory system, it is essential to wear a dust mask and operate in a well-ventilated environment.
HfO2 used in semiconductors must be packaged in a clean environment to avoid contamination that could affect device yield.
Although this product poses relatively little direct harm to the environment, it is still recommended that it be treated as general industrial solid waste and disposed of in accordance with local regulations.
When large quantities are discarded, consider recycling. Avoid discharging into sewers or the natural environment.
1. What is Hafnium Oxide?
Hafnium Oxide is an important inorganic material in the semiconductor and optics industries, possessing high dielectric constant, high melting point, and extremely high chemical stability. Its chemical formula is HfO2, its molecular weight is 210.49, its melting point is 2810℃, and its density is 9.68 g/mL at 25 °C (lit.).
2. Why is HfO2 suitable for optical coatings?
Primarily due to its high refractive index, wide spectral transmittance (from ultraviolet to infrared), high hardness, and excellent chemical and thermal stability. This combination of properties allows for the design of stable, durable multilayer optical films, meeting the stringent requirements of precision optical systems for optical performance and reliability.
3. What is the difference between HfO2 and ZrO2?
Both have similar properties, but Hafnium Oxide has a higher dielectric constant and better thermal stability, making it suitable for more demanding electronic materials.
We are a professional Hafnium Oxide supplier. For more information or to purchase Hafnium Oxide(HfO2), please feel free to contact us via jomin@wolfabio.com.
