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Molecular Formula: C11H18HfN3
Appearance: Low melting point solids or light-colored liquids
Molecular Weight: 370.78
Solubility: Readily soluble in common organic solvents, such as alkanes, ethers, and alkenes
Package Information: 100g, 500g, 1kg, or customized
CpHf has a vapor pressure suitable for ALD/CVD processes, enabling stable evaporation at lower temperatures. This gives it excellent process compatibility in depositing HfO2 films, contributing to more uniform and denser film structures.
Tris(Dimethylamino)Cyclopentadienyl Hafnium exhibits controllable decomposition behavior within the reaction temperature range, high thermal stability, reduced deposition defects, and effectively lowered carbon and nitrogen impurity content.
The industry typically offers 5N (99.999%) or even higher purity levels to meet the requirements of advanced processes (such as 28nm and below) for thin film fabrication, which helps improve the breakdown strength of the dielectric layer and the quality of the crystal structure.
CpHf can be used in ALD (Atomic Layer Deposition) and MOCVD (Metal Organic CVD), allowing wafer foundries to choose flexibly based on equipment capabilities.
Tris(Dimethylamino)Cyclopentadienyl Hafnium is a mainstream HfO2 precursor used to replace traditional SiO2 gate dielectrics, maintaining lower leakage current and higher gate dielectric performance in advanced processes.
Suitable for preparing functional thin films such as HfN, HfSiO, and HfAlO, which can be used as barrier layers, insulating layers, or high-temperature structural materials.
CpHf's excellent film uniformity makes it an irreplaceable hafnium source material in mainstream memory manufacturing, used to improve data retention and device reliability.
Including the deposition of dielectric materials for transistor structures such as FinFET and GAA, this process is of great strategic importance to advanced process nodes.
CpHf is extremely sensitive to moisture and oxygen; exposure may cause it to decompose rapidly and release amine gases, leading to product failure. It must be handled under inert gas (N2/Ar) protection.
Avoid direct sunlight and temperature fluctuations to prevent changes in vapor pressure characteristics.
In the ALD/CVD process, heated and kept dry delivery lines must be used to avoid residual moisture contaminating the reaction chamber.
Strong oxidizers can cause violent reactions and should not be stored together; they must be transported in sealed containers and kept upright.
1. What does Tris(Dimethylamino)Cyclopentadienyl Hafnium do?
It is a mainstream hafnium metal-organic precursor in the semiconductor industry, used for ALD/CVD deposition of high dielectric constant HfO2 thin films.
2. What reaction sources are typically used in conjunction with CpHf when depositing hafnium oxide thin films?
The most commonly used co-reaction sources are water, ozone, and oxygen plasma. The reaction with water is relatively mild and easy to control; the reaction with ozone can yield high-quality films at lower temperatures, but ozone is a strong oxidizing agent; oxygen plasma can achieve lower deposition temperatures and improve film density. The choice depends on the specific equipment capabilities and process objectives.
3. What are the advantages of CpHf compared to other Hf precursors?
CpHf has a more moderate evaporation temperature range, high film purity, and low residual carbon content, making it suitable for advanced node processes.
4. How are the products packaged?
Generally, custom-made metal containers or gas phase delivery bottles are used, and inert gas is used for sealing to ensure stability during transportation and storage.
We are a professional Tris(Dimethylamino)Cyclopentadienyl Hafnium supplier. For more information or to purchase Tris(Dimethylamino)Cyclopentadienyl Hafnium(CpHf), please feel free to contact us via jomin@wolfabio.com.
Molecular Formula: C11H18HfN3
Appearance: Low melting point solids or light-colored liquids
Molecular Weight: 370.78
Solubility: Readily soluble in common organic solvents, such as alkanes, ethers, and alkenes
Package Information: 100g, 500g, 1kg, or customized
CpHf has a vapor pressure suitable for ALD/CVD processes, enabling stable evaporation at lower temperatures. This gives it excellent process compatibility in depositing HfO2 films, contributing to more uniform and denser film structures.
Tris(Dimethylamino)Cyclopentadienyl Hafnium exhibits controllable decomposition behavior within the reaction temperature range, high thermal stability, reduced deposition defects, and effectively lowered carbon and nitrogen impurity content.
The industry typically offers 5N (99.999%) or even higher purity levels to meet the requirements of advanced processes (such as 28nm and below) for thin film fabrication, which helps improve the breakdown strength of the dielectric layer and the quality of the crystal structure.
CpHf can be used in ALD (Atomic Layer Deposition) and MOCVD (Metal Organic CVD), allowing wafer foundries to choose flexibly based on equipment capabilities.
Tris(Dimethylamino)Cyclopentadienyl Hafnium is a mainstream HfO2 precursor used to replace traditional SiO2 gate dielectrics, maintaining lower leakage current and higher gate dielectric performance in advanced processes.
Suitable for preparing functional thin films such as HfN, HfSiO, and HfAlO, which can be used as barrier layers, insulating layers, or high-temperature structural materials.
CpHf's excellent film uniformity makes it an irreplaceable hafnium source material in mainstream memory manufacturing, used to improve data retention and device reliability.
Including the deposition of dielectric materials for transistor structures such as FinFET and GAA, this process is of great strategic importance to advanced process nodes.
CpHf is extremely sensitive to moisture and oxygen; exposure may cause it to decompose rapidly and release amine gases, leading to product failure. It must be handled under inert gas (N2/Ar) protection.
Avoid direct sunlight and temperature fluctuations to prevent changes in vapor pressure characteristics.
In the ALD/CVD process, heated and kept dry delivery lines must be used to avoid residual moisture contaminating the reaction chamber.
Strong oxidizers can cause violent reactions and should not be stored together; they must be transported in sealed containers and kept upright.
1. What does Tris(Dimethylamino)Cyclopentadienyl Hafnium do?
It is a mainstream hafnium metal-organic precursor in the semiconductor industry, used for ALD/CVD deposition of high dielectric constant HfO2 thin films.
2. What reaction sources are typically used in conjunction with CpHf when depositing hafnium oxide thin films?
The most commonly used co-reaction sources are water, ozone, and oxygen plasma. The reaction with water is relatively mild and easy to control; the reaction with ozone can yield high-quality films at lower temperatures, but ozone is a strong oxidizing agent; oxygen plasma can achieve lower deposition temperatures and improve film density. The choice depends on the specific equipment capabilities and process objectives.
3. What are the advantages of CpHf compared to other Hf precursors?
CpHf has a more moderate evaporation temperature range, high film purity, and low residual carbon content, making it suitable for advanced node processes.
4. How are the products packaged?
Generally, custom-made metal containers or gas phase delivery bottles are used, and inert gas is used for sealing to ensure stability during transportation and storage.
We are a professional Tris(Dimethylamino)Cyclopentadienyl Hafnium supplier. For more information or to purchase Tris(Dimethylamino)Cyclopentadienyl Hafnium(CpHf), please feel free to contact us via jomin@wolfabio.com.
