Views: 0 Author: Site Editor Publish Time: 2025-11-14 Origin: Site
Facing the bottlenecks of high resistivity and low electromigration resistance that traditional copper interconnects encounter at the 10nm and below process nodes in advanced integrated circuit (IC) manufacturing, metal cobalt films have become an indispensable component in advanced chips due to their outstanding thermal stability and reliability in extreme environments of high temperature and high current density.
Several leading IC manufacturers, including Intel, TSMC, and Samsung, have successfully introduced cobalt into their advanced nanoscale manufacturing processes. In the 10/14/16nm and even smaller technology nodes, cobalt films have demonstrated enormous value:
Excellent Electrical Conductivity: Maintains low resistance at minute dimensions.
High Electromigration Resistance: Significantly enhances the long-term reliability of devices.
Low Diffusion Tendency: An ideal choice for use as a barrier layer and interconnect.
The advantages of cobalt films in the integrated circuit field are not limited to their direct application as conductive materials. They can also be converted through further deposition processes into:
Cobalt Silicide (CoSi2): Due to its wider silicidation window and excellent electrical conductivity, it is gradually replacing titanium silicide (TiSi2) as the material of choice in self-aligned silicidation (Salicidation) applications.
Binary compounds like cobalt oxide, cobalt sulfide, etc.: These have demonstrated enormous application potential in broader fields such as magneto-optical recording media, data storage, sensor technology, catalysts, and optical devices.
In the field of cobalt thin film preparation, the current research and commercial focus is mainly on vapor phase deposition techniques, especially Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD).
The advantages of ALD/CVD lie in: excellent step coverage, outstanding film thickness control capability, and high-purity thin film growth, which is crucial for advanced IC manufacturing.
However, given that the thermal, chemical, electrical, compositional, and morphological properties of cobalt thin films can vary significantly under different preparation conditions, the core challenge in preparing high-quality cobalt thin films is:
How to select and use cobalt precursors with high purity, high stability, and excellent vapor pressure? This is key to determining the final film quality and the deposition process window.
Although the aforementioned data provides technical reference, commercial ALD/CVD processes have extremely stringent requirements for precursor purity and stability. Specifically, there is a need to meet the special requirements of semiconductor manufacturing for metal impurity content (ppb level), thermal decomposition temperature, and stable vapor pressure.
Wolfa has developed a series of high-purity, high-performance cobalt precursor products tailored to the needs of advanced semiconductor processes. Our products are rigorously screened and purified, and are designed specifically to achieve stable, fast, and high-quality cobalt thin film deposition.
[Highly Recommended] List of Wolfa High-Performance ALD/CVD Precursors
| Product Name | CAS | Chemical Fomula |
| Cobalt carbonyl | 10210-68-1 | Co2(CO)8 |
| Dicarbonylcyclopen-tadienyl cobalt | 12078-25-0 | CpCo(CO)2 |
| (3,3-dimethyl-1-butyne) dicobalt hexacarbonyl | 56792-69-9 | CCTBA |
| Chromium hexacarbonyl | 13007-92-6 | Cr(CO)6 |
| Tungsten hexacarbonyl | 14040-11-0 | W(CO)6 |
| Molybdenum hexacarbonyl | 13939-06-5 | Mo(CO)6 |
| Tetrakis(dimethylamino) hafnium | 19782-68-4 | TDMAH |
| Tetrakis(ethylmethylamino) hafnium | 352535-01-4 | TEMAH |
| Tetrakis (dimethylamino) zirconium | 19756-04-8 | TDMAZ |
| Tetrakis (ethylmethylamino) zirconium | 13801-49-5 | TDEAZ |
| Tetrakis (dimethylamino) tin | 1066-77-9 | TDMASn |
| Tetrakis (dimethylamino) titanium | 3275-24-9 | TDMAT |
| Pentakis (dimethylamino) tantalum | 19824-59-0 | PDMAT |
| Bis(cyclopentadienyl) nickel | 1271-28-9 | NiCp2 |
| Tris(cyclopentadienyl) yttrium | 1294-07-1 | YCp3 |
| Bis(ethylcyclopentadienyl) ruthenium | 32992-96-4 | Ru(CpEt)2 |
Metal cobalt thin films and their compounds are undoubtedly key to breaking through the performance bottlenecks of future integrated circuits, and selecting the correct, high-quality cobalt precursor is the foundation for achieving this goal. Wolfa is committed to providing high-purity ALD/CVD precursors that meet the most advanced semiconductor process standards.
To learn more information or to purchase cobalt precursors, please feel free to contact us at jomin@wolfabio.com.
